2SD1134
2SD1134 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector Current: IC= 4A
- Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@IC= 2A
- High Collector Power Dissipation
- plement to Type 2SB858
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Total Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-45~150 ℃
2SD1134 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
