2SD1135 Overview
IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@IC= 2A ·High Collector Power Dissipation ·plement to Type 2SB859 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1135 TC=25℃ unless otherwise specified SYMBOL PARAMETER...
