High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min)
Wide Area of Safe Operation
Complement to Type 2SB860
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifier TV vertical
defle
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB860 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier TV vertical
deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
1.8 W
40
150
℃
Tstg
Storage Temperature Range
-45~150
℃
2SD1137
isc website：www.
2SD1137 Datasheet
