| Part number | 2SD1137 |
|---|---|
| Datasheet | 2SD1137-INCHANGE.pdf |
| File Size | 203.51 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1137 | NPN TRANSISTOR | Hitachi Semiconductor |
 |
2SD1137 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SD1137 | Silicon NPN Transistor | Renesas |
