2SD1142 - NPN Transistor

Inchange Semiconductor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 2.5A Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output

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2SD1142 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1142
Manufacturer	Inchange Semiconductor
File Size	197.01 KB
Description	NPN Transistor
Datasheet	2SD1142 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1142 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 2.5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3.5 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 6 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.