2SD114 - NPN Transistor

Inchange Semiconductor

General Description

High DC Current Gain- : hFE= 25-100@IC= 7.5A Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

audio amplifiers to 100-Watts music power per channel.

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Datasheet Details

Part number	2SD114
Manufacturer	Inchange Semiconductor
File Size	200.68 KB
Description	NPN Transistor
Datasheet	2SD114 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 25-100@IC= 7.5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.