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2SD1149 - NPN TRANSISTOR

Key Features

  • q q q q 0.65±0.15 1.5.
  • 0.05 +0.25 0.65±0.15 +0.2 1.1.
  • 0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 100 100 15 50 20 200 150.
  • 55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO.
  • 236 EIAJ:SC.
  • 59 Mini Type Package Marking symb.

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Full PDF Text Transcription (Reference)

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Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 s Features q q q q 0.65±0.15 1.5 –0.05 +0.25 0.65±0.15 +0.2 1.1 –0.