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Transistor
2SD1198, 2SD1198A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
Unit: mm
6.9±0.1 1.5
0.4
s Features
q
2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
q q
0.85
(Ta=25˚C)
Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 Unit V
2.5 2.5 3 2 1
Parameter Collector to base voltage Collector to 2SD1198 2SD1198A 2SD1198
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
emitter voltage 2SD1198A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
V V A A W ˚C ˚C
≈200Ω E B
1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package
Internal Connection
C
Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.
2SD1198 Datasheet
