Datasheet Summary
Transistor
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0 s Features q q q q q
1.5 R0.9 R0.9
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
2.4±0.2 2.0±0.2 3.5±0.1
0.45±0.05 1
1.0±0.1
0. 7
0.55±0.1 s...