2SD1199 Datasheet PDF - Panasonic Semiconductor Silicon NPN Transistor Specs

2SD1199 - Silicon NPN Transistor

Datasheet Summary

Features

q q q q q 1.5 R0.9 R0.9 0.4 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 2.4±0.2 2.0±0.2 3.5±0.1 1.0 0.45±0.05 1 1.0±0.1 R 0. 7 0.85 0.55±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak.

Datasheet Details

Part number	2SD1199
Manufacturer	Panasonic Semiconductor
File Size	39.43 KB
Description	Silicon NPN Transistor
Datasheet	2SD1199 Datasheet
Additional preview pages of the 2SD1199 datasheet.

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Full PDF Text Transcription

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Transistor 2SD1199 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 s Features q q q q q 1.5 R0.9 R0.9 0.4 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 2.4±0.2 2.0±0.2 3.5±0.1 1.0 0.45±0.05 1 1.0±0.1 R 0. 7 0.85 0.55±0.

Published: Apr 3, 2005 |