q q q q q
1.5 R0.9 R0.9
0.4
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 2.4±0.2 2.0±0.2 3.5±0.1
1.0
0.45±0.05 1
1.0±0.1
R
0. 7
0.85
0.55±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak.
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Transistor
2SD1199
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
s Features
q q q q q
1.5 R0.9 R0.9
0.4
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
2.4±0.2 2.0±0.2 3.5±0.1
1.0
0.45±0.05 1
1.0±0.1
R
0. 7
0.85
0.55±0.
2SD1199 Datasheet
