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2SD1195 - PNP/NPN Transistors

Key Features

  • High DC current gain.
  • High current capacity and wide ASO.
  • Low saturation voltage. 18.0 2.7 5.6 1.2 0.8 14.0 15.1 6.3 0.4 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 2.55 2.55 Conditions 2.7 ( ) : 2SB885 1 : B.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SD1190 PNP/NPN Transistors
2SD1191 PNP/NPN Transistors
2SD1192 PNP/NPN Transistors
2SD1193 PNP/NPN Transistors
2SD1194 PNP/NPN Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN927E www.DataSheet4U.com PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB885/2SD1195 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Package Dimensions unit:mm 2010C [2SB885/2SD1195] 10.2 3.6 5.1 4.5 1.3 Features · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. 18.0 2.7 5.6 1.2 0.8 14.0 15.1 6.3 0.4 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 2.55 2.55 Conditions 2.