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2SD1195 - Silicon NPN Darlington Power Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 1500(Min) @IC= 2.5A Low Saturation Voltage Complement to Type 2SB885 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor

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Datasheet Details

Part number 2SD1195
Manufacturer Inchange Semiconductor
File Size 210.76 KB
Description Silicon NPN Darlington Power Transistor
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isc Silicon NPN Darlington Power Transistor 2SD1195 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 2.5A ·Low Saturation Voltage ·Complement to Type 2SB885 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 1.
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