| Part number | 2SD1190 |
|---|---|
| Datasheet | 2SD1190_InchangeSemiconductor.pdf |
| File Size | 191.15 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1190 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1190 | PNP/NPN Transistors | Sanyo Semicon Device |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1191 | Silicon NPN Darlington Power Transistor |
| 2SD1192 | Silicon NPN Darlington Power Transistor |
| 2SD1195 | Silicon NPN Darlington Power Transistor |
| 2SD1113 | Silicon NPN Power Transistor |
| 2SD1117 | Silicon NPN Power Transistor |
| 2SD1118 | Silicon NPN Power Transistor |
| 2SD1126 | Silicon NPN Darlington Power Transistor |
| 2SD1127 | Power Transistor |
| 2SD1141 | Power Transistor |
| 2SD1154 | Silicon NPN Power Transistor |
