2SD1196 Datasheet (PDF) Download
Inchange Semiconductor
2SD1196

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 1500(Min) @IC= 4A Low Saturation Voltage Complement to Type 2SB886 Minimum Lot-to-Lot variations for robust device performance and reliable operation.