| Part number | 2SD1193 |
|---|---|
| Datasheet | 2SD1193-INCHANGE.pdf |
| File Size | 212.20 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1193 | PNP/NPN Transistors | Sanyo Semicon Device |
 |
2SD1193 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1194 | NPN Transistor |
| 2SD1196 | NPN Transistor |
| 2SD1197 | NPN Transistor |
| 2SD111 | Silicon NPN Power Transistor |
| 2SD1110 | NPN Transistor |
| 2SD1114 | NPN Transistor |
| 2SD1115 | NPN Transistor |
| 2SD1124 | NPN Transistor |
| 2SD1128 | NPN Transistor |
| 2SD113 | NPN Transistor |
