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2SD1119 - NPN TRANSISTOR

Key Features

  • 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.4max. 45° 1.0.
  • 0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0.
  • 0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector t.

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Full PDF Text Transcription (Reference)

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Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm s Features 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.