Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD1119 TRANSISTOR (NPN)
Features z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low voltage power supply.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature
Value 40 25 7 3 500 150
-55~150
Unit V V V A mW ℃
℃
SOT-89-3L
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise...
