Galaxy Century Microelectronics 2SD1119
Silicon NPN Transistor
| Part No. | 2SD1119 |
|---|---|
| Datasheet | 2SD1119 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
z Low collector-emitter saturation voltage VCE(sat). z Satisfactory operation performances at high efficiency with the low-voltage power supply. Pb Lead-free Production specification 2SD1119 ORDERING INFORMATION Type No. Marking 2SD1119 TQ/TR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC ICP PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Collector power dissipation 40 V 25 V 7V 3A 5A 1W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ E057 Rev.A 1 Production specification Silicon NPN epitaxial planar type 2SD1119ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO IC=1mA ,IB=0 25 V Emitter-base breakdown voltage V(B
