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2SD1119 - Silicon NPN Transistor

Key Features

  • z Low collector-emitter saturation voltage VCE(sat). z Satisfactory operation performances at high efficiency with the low-voltage power supply. Pb Lead-free Production specification 2SD1119.

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Silicon NPN epitaxial planar type FEATURES z Low collector-emitter saturation voltage VCE(sat). z Satisfactory operation performances at high efficiency with the low-voltage power supply. Pb Lead-free Production specification 2SD1119 ORDERING INFORMATION Type No. Marking 2SD1119 TQ/TR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC ICP PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Collector power dissipation 40 V 25 V 7V 3A 5A 1W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ E057 Rev.A www.gmicroelec.