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2SD1158 Datasheet - INCHANGE

NPN Transistor

2SD1158 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) *High DC Current Gain- : hFE= 250V(Min.) @IC= 1A *Low Collector Saturation Voltage *High Reliability *Minimum Lot-to-Lot variations for robust device performance and reliable operati APPLICATIONS *Switching regulators.

2SD1158 Datasheet (205.58 KB)

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Datasheet Details

Part number:

2SD1158

Manufacturer:

INCHANGE

File Size:

205.58 KB

Description:

Npn transistor.

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2SD1158 NPN Transistor INCHANGE

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