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2SD1159 - NPN Transistor

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Datasheet Details

Part number 2SD1159
Manufacturer INCHANGE
File Size 203.66 KB
Description NPN Transistor
Datasheet download datasheet 2SD1159-INCHANGE.pdf

2SD1159 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output, high-current switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltag

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