2SD1186 - NPN Transistor

Inchange Semiconductor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power switching applications.

📥 Download Datasheet

2SD1186 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1186
Manufacturer	Inchange Semiconductor
File Size	198.78 KB
Description	NPN Transistor
Datasheet	2SD1186 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SD1186	SILICON POWER TRANSISTOR	SavantIC
2SD1180	SILICON POWER TRANSISTOR	SavantIC
2SD1185	SILICON POWER TRANSISTOR	SavantIC
2SD1187	NPN TRANSISTOR	Toshiba Semiconductor
2SD1187	Silicon NPN Power Transistor	Inchange Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number	Description
2SD1180	NPN Transistor
2SD1183	NPN Transistor
2SD1184	NPN Transistor
2SD1185	NPN Transistor
2SD111	Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC TC=25℃ TJ Junction Temperature 7 A 50 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD1186 isc website：www.iscsemi.