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2SD1193 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High DC Current Gain : hFE= 2000(Min) @IC= 7.0A Low Saturation Voltage Complement to Type 2SB883 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor

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isc Silicon NPN Darlington Power Transistor 2SD1193 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 7.