Datasheet4U Logo Datasheet4U.com

2SD1196 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 1500(Min) @IC= 4A Low Saturation Voltage Complement to Type 2SB886 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor d

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1196 PNP/NPN Transistors Sanyo Semicon Device
2SD1196 SILICON POWER TRANSISTOR SavantIC
2SD1190 PNP/NPN Transistors Sanyo Semicon Device
2SD1190 Silicon NPN Darlington Power Transistor Inchange Semiconductor
2SD1191 PNP/NPN Transistors Sanyo Semicon Device

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1193 NPN Transistor
2SD1194 NPN Transistor
2SD1197 NPN Transistor
2SD111 Silicon NPN Power Transistor
2SD1110 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 4A ·Low Saturation Voltage ·Complement to Type 2SB886 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 1.