Low Collector Saturation Voltage
High DC Current Gain
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High ruggedness electronic ignitions
High voltage ignition coil driver
General purpose power
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1202
DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
500
VCEO
Collector-Emitter Voltage
400
VEBO
Emitter-Base Voltage
7
IC
Collector Current
10
ICM
Collector Current-peak
20
IB
Base Current
1
PC
Collector Power Dissipation @TC=25℃
100
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAM
2SD1202 Datasheet
