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2SD1210 - NPN Transistor

General Description

High DC Current Gain : hFE= 1000(Min.)@ IC= 10A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current sw

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isc Silicon NPN Darlington Power Transistor 2SD1210 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use.