Datasheet4U Logo Datasheet4U.com

2SD1212 - NPN Transistor

General Description

High Collector Current:: IC= 12A Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@IC= 5A Complement to Type 2SB903 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converte

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1212 PNP/NPN Transistors Sanyo Semicon Device
2SD1212 SILICON POWER TRANSISTOR SavantIC
2SD1211 Silicon NPN Transistor Panasonic Semiconductor
2SD1213 PNP/NPN Transistors Sanyo Semicon Device
2SD1213 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1210 NPN Transistor
2SD1213 NPN Transistor
2SD1202 NPN Transistor
2SD1204 NPN Transistor
2SD1223 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor 2SD1212 DESCRIPTION ·High Collector Current:: IC= 12A ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@IC= 5A ·Complement to Type 2SB903 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other general large-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 20 A 35 W 1.