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2SD1213 - NPN Transistor

General Description

High Collector Current:: IC= 20A Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@IC= 8A Complement to Type 2SB904 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, hig

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isc Silicon NPN Power Transistor 2SD1213 DESCRIPTION ·High Collector Current:: IC= 20A ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@IC= 8A ·Complement to Type 2SB904 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for large current switching of relay drivers, high-speed inverters,converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 30 A 60 W 2.