Datasheet4U Logo Datasheet4U.com

2SD1229 - NPN Transistor

General Description

High DC Current Gain : hFE= 2000(Min.)@ IC= 5A, VCE= 2V Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) Complement to Type 2SB912 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer h

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1229 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SD1229 SILICON POWER TRANSISTOR SavantIC
2SD1220 Silicon NPN Transistor Toshiba Semiconductor
2SD1221 Silicon NPN Transistor Toshiba Semiconductor
2SD1221 NPN Transistors KEXIN

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1223 NPN Transistor
2SD1202 NPN Transistor
2SD1204 NPN Transistor
2SD1210 NPN Transistor
2SD1212 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor 2SD1229 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= 5A, VCE= 2V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) ·Complement to Type 2SB912 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 2.