2SD1241 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High Current Capability ·Excellent Safe Operating Area ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Power amplifiers . 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification 2SD1241 TC=25℃ unless...