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2SD1241 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regu

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isc Silicon NPN Power Transistor isc Product Specification 2SD1241 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High Current Capability ·Excellent Safe Operating Area ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Power amplifiers . Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V 60 V 8 V 5 A 10 A 60 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.