Datasheet4U Logo Datasheet4U.com

2SD1243 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regu

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1243 SILICON POWER TRANSISTOR SavantIC
2SD1244 Silicon NPN Transistor Panasonic Semiconductor
2SD1245 Silicon NPN Power Transistor Inchange Semiconductor
2SD1246 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SD1247 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1241 NPN Transistor
2SD1242 NPN Transistor
2SD1202 NPN Transistor
2SD1204 NPN Transistor
2SD1210 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor isc Product Specification 2SD1243 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High Current Capability ·Excellent Safe Operating Area ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Power amplifiers . Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V 60 V 8 V 10 A 15 A 100 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.