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2SD1271A - NPN Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) Good Linearity of hFE Complement to Type 2SB946A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De

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isc Silicon NPN Power Transistor 2SD1271A DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Good Linearity of hFE ·Complement to Type 2SB946A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification.