Datasheet4U Logo Datasheet4U.com

2SD1297 - NPN Transistor

General Description

High DC Current Gain : hFE= 1000(Min.)@ IC= 15A, VCE= 2V High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequ

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1297 SILICON POWER TRANSISTOR SavantIC
2SD129 (2SD129 / 2SD130) Silicon NPN Transistor ETC
2SD1290 SILICON POWER TRANSISTOR SavantIC
2SD1291 SILICON POWER TRANSISTOR SavantIC
2SD1292 NPN Transistor Rohm

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1290 NPN Transistor
2SD1291 NPN Transistor
2SD1294 NPN Transistor
2SD1296 NPN Transistor
2SD1202 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor 2SD1297 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 15A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications.