2SD1311 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio frequency power amplifier applications.

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2SD1311 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1311
Manufacturer	Inchange Semiconductor
File Size	204.32 KB
Description	NPN Transistor
Datasheet	2SD1311 Datasheet

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isc Silicon NPN Power Transistor 2SD1311 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.6 A 1.