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2SD1313 - NPN Transistor

General Description

High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min) High Speed Switching Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications

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isc Silicon NPN Power Transistor 2SD1313 DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min) ·High Speed Switching ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High power switching applications.