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2SD1352 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min) Good Linearity of hFE Complement to Type 2SB989 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB989 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IE Emitter Current-Continuous 4 A IB Base Current-Continuous 0.4 A PC Collector Power Dissipation@ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1352 isc website：www.iscsemi.