High DC Current Gain-
: hFE = 2000(Min)@ IC= 1A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
Low Collector-Emitter Saturation Voltage
Complement to Type 2SB1012
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage·Complement to Type 2SB1012 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
3.
2SD1376 Datasheet
