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2SD1386 Datasheet

Manufacturer: Inchange Semiconductor
2SD1386 datasheet preview

2SD1386 Details

Part number 2SD1386
Datasheet 2SD1386-INCHANGE.pdf
File Size 196.64 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
2SD1386 page 2

2SD1386 Overview

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 4A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications.

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