Datasheet Details
| Part number | 2SD1380 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.84 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1380-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1380 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.84 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1380-INCHANGE.pdf |
|
|
|
·High Collector Current -IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB1009 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1380 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1380 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1380 | SILICON POWER TRANSISTOR | SavantIC |
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