Datasheet Details
| Part number | 2SD1386 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.64 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1386-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1386 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.64 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1386-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 4A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 12 A 50 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1386 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
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|---|---|
| 2SD1380 | NPN Transistor |
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| 2SD1301 | NPN Transistor |
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| 2SD1308 | NPN Transistor |
| 2SD1309 | Silicon NPN Darlington Power Transistor |
| 2SD1311 | NPN Transistor |
| 2SD1313 | NPN Transistor |
| 2SD133 | NPN Transistor |