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2SD1386 - NPN Transistor

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Part number 2SD1386
Manufacturer INCHANGE
File Size 196.64 KB
Description NPN Transistor
Datasheet download datasheet 2SD1386 Datasheet
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) High DC Current Gain : hFE= 2000(Min) @IC= 4A Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications.

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