2SD1386 datasheet by Inchange Semiconductor.
| Part number | 2SD1386 |
|---|---|
| Datasheet | 2SD1386-INCHANGE.pdf |
| File Size | 196.64 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 4A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications.
View all Inchange Semiconductor datasheets
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|---|---|
| 2SD1380 | NPN Transistor |
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| 2SD1301 | NPN Transistor |
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| 2SD1308 | NPN Transistor |
| 2SD1309 | Silicon NPN Darlington Power Transistor |
| 2SD1311 | NPN Transistor |
| 2SD1313 | NPN Transistor |
| 2SD133 | NPN Transistor |
