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2SD1417 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) Low Collector Saturation Voltage Complement to Type 2SB1022 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Darlington Power Transistor 2SD1417 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturation Voltage ·Complement to Type 2SB1022 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.