2SD1426 - NPN Transistor

Inchange Semiconductor

General Description

High Breakdown Voltage High Switching Speed Built-in damper diode Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

colour TV receivers.

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2SD1426 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1426
Manufacturer	Inchange Semiconductor
File Size	211.79 KB
Description	NPN Transistor
Datasheet	2SD1426 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Built-in damper diode ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.0 A 80 W 150 ℃ Tstg Storage Temperature Range -55-150 ℃ THERMAL CHARACTERISTICS SYMBO L PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.