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2SD1427 - NPN Transistor

General Description

High Breakdown Voltage High Switching Speed Built-in damper diode Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in large screen color deflection circuits.

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isc Silicon NPN Power Transistor 2SD1427 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Built-in damper diode ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2.5 A 80 W 150 ℃ Tstg Storage Temperature Range -55-150 ℃ THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.