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isc Silicon NPN Power Transistor
DESCRIPTION ·High Speed
tf= 1.0 us(MIN) @ IC= 4A , IB(end)= 0.8A ·High Voltage
VCBO=1300V ·Low Saturation Voltage
VCE(sat)<5.0V@ IC = 4A; IB = 0.8A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1300
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IE
Emitter Current
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
5
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1431
isc website：www.iscsemi.
2SD1431 Datasheet
