2SD1437 Overview
·Collector-Emitter Breakdown Voltage :V(BR)CEO= 60V(Min) ·plement to Type 2SB1033 ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplification. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1437 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...