High Voltage
High Switching Speed
Built-in damper diode
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistor
2SD1439
DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of
colour TV receivers.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICP
Collector Current-Peak
10
A
IBP
Base Current- Peak
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation
@Ta=25℃
Tj
Junction Temperature
3.5
A
50 W
2.5
130
℃
Tstg
Storage Temperature Range
-55-130 ℃
isc website：www.iscsemi.
2SD1439 Datasheet
