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isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
4
A
50
W
150
℃
Tstg
Storage Temperature Range
-45~150
℃
2SD1454
isc website：www.iscsemi.
2SD1454 Datasheet
