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2SD1480 - NPN Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) Good Linearity of hFE Complement to Type 2SB1052 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des

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isc Silicon NPN Power Transistor 2SD1480 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB1052 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.