Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@IC= 4A
Wide Area of Safe Operation
Complement to Type 2SB1055
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistor
2SD1486
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@IC= 4A ·Wide Area of Safe Operation ·Complement to Type 2SB1055 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
10
A
3 W
70
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SD1486 Datasheet
