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2SD1488 - NPN Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 7A Wide Area of Safe Operation Complement to Type 2SB1057 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high power amplifier applications.

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Datasheet Details

Part number 2SD1488
Manufacturer INCHANGE
File Size 210.86 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SD1488 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 7A ·Wide Area of Safe Operation ·Complement to Type 2SB1057 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 9 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 3 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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