Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@IC= 2A
Wide Area of Safe Operation
Complement to Type 2SB1065
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifier applications.
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isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@IC= 2A ·Wide Area of Safe Operation ·Complement to Type 2SB1065 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
4.5
A
1.2 W
10
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1506
isc website：www.iscsemi.
2SD1506 Datasheet
