Datasheet Details
| Part number | 2SD1540 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.36 KB |
| Description | NPN Transistor |
| Download | 2SD1540 Download (PDF) |
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| Part number | 2SD1540 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.36 KB |
| Description | NPN Transistor |
| Download | 2SD1540 Download (PDF) |
|
|
|
·High DC current gain- hFE = 800 (Min) @ IC = 0.5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 6 A IB Base Current 0.2 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD1540 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA;
INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor.
| Part Number | Description |
|---|---|
| 2SD1541 | NPN Transistor |
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| 2SD1549 | NPN Transistor |
| 2SD1503 | NPN Transistor |
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