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2SD1541 - NPN Transistor

General Description

Collector-Base Breakdown Voltage- : VCBO= 1300V (Min) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for horizontal deflection output applications .

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 50 W 130 ℃ Tstg Storage Temperature Range -55~130 ℃ 2SD1541 isc website：www.iscsemi.